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IRFP 240 MFET N-Channel Transistor

IRFP 240 MFET N-Channel Transistor

$118.00 $59.00
IRFP 240 MFET Features 20A, 200V rDS(ON) = 0.180 Single Pulse Avalanche Energy Rated SOA…

IRFP 240 MFET Features

  • 20A, 200V
  • rDS(ON) = 0.180
  • Single Pulse Avalanche Energy Rated
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance

Technical

  • Drain to Source Voltage (VDS) : 200 V
  • Drain to Gate Voltage (RGS = 20k) (VDGR) : 200 V
  • Continuous Drain Current (ID) : 20 A
  • TC = 100oC : 12 A
  • Pulsed Drain Current (IDM) : 80 A
  • Gate to Source Voltage (VGS) : 20 V
  • Maximum Power Dissipation (PD) 150 W
  • Linear Derating Factor : 1.2 W/Degree C
  • Single Pulse Avalanche Energy Rating (EAS) : 510 mJ
  • Operating and Storage Temperature (TJ, TSTG) : -55 to 150 Degree C

Click here for more information – DATASHEET

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